2012.09 - 2016.06                 里昂大学                           工学                  博士
2009.09 - 2012.04         西安电子科技大学          材料科学与工程          硕士
2005.09 - 2009.07         西安电子科技大学          电子科学与技术          学士

2021.08 -  至今                 350vip8888新葡的京集团           长聘教轨副教授
2016.12 - 2021.08           新加坡国立大学               博士后

1. 铁电材料与铁电功能器件 (Ferroelectric Materials and Functional Devices)
2. 微纳尺度材料器件表征量测（ Characterization&Metrology of Nanoscale Materials&Devices）
3. 新型存储与神经形态器件技术 (Memory and Neuromorphic Device Technology)
4. 半导体电子器件与系统 (Semiconductors and Nanoelectronic Devices&Systems)
5. 纳米材料光电器件 (Optoelectronic Nanomaterials and Nanodevices)

IEEE 高级会员
IEEE EDS 高级会员
Information & Functional Materials (Wiley)  青年编委
Engineering Reports (Wiley) 青年编委
Nanomaterials 客座编辑
Materials 客座编辑
受邀担任Nature communications, Nano Research, IEEE Transactions on Electron Devices, International Journal of Extreme Manufacturing, Journal of Vacuum Science and Technology B, Chemistry of Materials, Superlattices and Microstructures等期刊审稿人。

著作章节:  
1. L. Wang, K.-W. Ang, "Two-dimensional materials toward future photovoltaic devices". Book title: 2D Materials for Photonic and Optoelectronic Applications. Elsevier, 2020.
2. W. C. Tan, X. Huang, L. Huang, L. Wang, X. Feng, L. Chen, and K.-W. Ang, "Recent advances in black phosphorus and transition metal dichalcogenide-based electronic and optoelectronic devices". Book title: 2D Semiconductor Materials and Devices, Elsevier, 2020.

主要论文：( denotes corresponding author, # denotes co-first author):
1.     L. Wang, H. Chen, M. Chen et al. "A Scanning Microwave Impedance Microscopy Study of α‐In2Se3 Ferroelectric Semiconductor". Advanced Functional Materials, 34, 2316583, 2024.
2.     L. Wang, X. Zhou, M. Su et al. "In-Plane Ferrielectric Order in van der Waals β′-In2Se3". ACS nano, 18, 809, 2024.
3. L. Wang, X. Wang, Y. Zhang, R. Li, T. Ma, K. Leng, Z. Chen, I. Abdelwahab, and K. P. Loh, " Exploring ferroelectric switching in α-In2Se3 for neuromorphic computing". Advanced Functional Materials, 30, 2004609, 2020.
4. K. Leng#, L. Wang#, Y. Shao, I. Abdelwahab, G. Grinblat, I. Verzhbitskiy, R. Li, Y. Cai, X. Chi, W. Fu, P. Song, A. Rusydi, G. Eda, S. A. Maier, and K. P. Loh, "Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface". Nature Communications, 11, 5483, 2020.
5. L. Chen#, L. Wang#, Y. Peng, X. Feng, S. Sarkar, S. Li, B. Li, L. Liu, K. Han, X. Gong, J. Chen, Y. Liu, G. Han, and K.-W. Ang, "A van der Waals synaptic transistor based on ferroelectric HfZrO and two-dimensional tungsten disulfide". Advanced Electronic Materials, 6, 2000057, 2020.
6. L. Wang#, W. Liao#, S. L. Wong, Z. G. Yu, S. Li, Y.-F. Lim, X. Feng, W. C. Tan, X. Huang, L. Chen, L. Liu, J. Chen, X. Gong, C. Zhu, X. Liu, Y.-W. Zhang, D. Chi, and K.-W. Ang, "Artificial synapses based on multi-terminal memtransistors for neuromorphic application". Advanced Functional Materials, 29, 1901106, 2019. (ESI高被引论文)
7. L. Wang#, W. Liao#, S. Xu, X. Gong, C. Zhu, and K.-W. Ang, "Unipolar n-type conduction in black phosphorus induced by atomic layer deposited MgO". IEEE Electron Device Letters, 40, 471, 2019. (Most popular article of 03/2019)
8. L. Wang#, L. Chen#, S. L. Wong, X. Huang, W. Liao, C. Zhu, Y.-F. Lim, D. Li, X. Liu, D. Chi, and K.-W. Ang, "Electronic devices and circuits based on wafer-scale polycrystalline monolayer MoS2 by chemical vapor deposition". Advanced Electronic Materials, 5, 1900393, 2019. (封面文章)
9. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, X. Huang, and K.-W. Ang, "2D Photovoltaic Devices: Progress and Prospects". Small Methods, 2, 1700294, 2018. (邀请文章)
10. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang, "Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black-Phosphorus Heterojunction Diode". Advanced Electronic Materials, 4, 1700442, 2018.
11. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang, "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics". Nanoscale, 10, 14359, 2018.
12. W. Liao#, L. Wang#, L. Chen, W. Wei, Z. Zeng, X. Feng, L. Huang, W. C. Tan, X. Huang, K.-W. Ang, and C. Zhu, "Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits". Nanoscale, 10, 17007, 2018.
13. L. Wang, C. Sartel, S, Hassani, V. Sallet, and G. Brémond, "Resolving ZnO-based coaxial core-multishell heterostructure by electrical scanning probe microscopy". Applied Physics Letters, 113, 222103, 2018.
14. L. Wang, B. Gautier, A. Sabac, and G. Brémond, "Investigation of tip-depletion-induced fail in scanning capacitance microscopy for the determination of carrier type". Ultramicroscopy, 174, 46, 2017.
15. L. Wang, J. M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C. Sartel, and G. Brémond, "Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy". Applied Physics Letters, 108, 132103, 2016.  
16. L. Wang, V. Sallet, C. Sartel, and G. Brémond, "Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy". Applied Physics Letters, 109, 092101, 2016.
17. L. Wang, S. Guillemin, J. M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, and G. Brémond, "Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy". Phys. Status Solidi C, 13, 576, 2016.
18. L. Wang, J. Laurent, J. M. Chauveau, V. Sallet, F. Jomard, and G. Brémond, "Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy". Applied Physics Letters, 107, 192101, 2015.